MAHDI POURFATH PDF

Mahdi Pourfath. ORCID iD. Print view. Open a version of this ORCID record formatted for printing. List of computer science publications by Mahdi Pourfath. Ph.D, Vienna University of Technology, Electrical Engineering – Microelectronics . → , Sharif University of Technology, Electrical Engineering -.

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All simulations were based on the assumption of cylindrical symmetry. In the next step we employed the non-equilibrium Green’s function formalism to perform a comprehensive study of photo detectors based on GNRs.

He studied electrical engineering at the Sharif University of Technology, where he received the degree pkurfath Master of Science in He studied electrical engineering at the Sharif University of Technology, where he received the degree of Master of Science in Finally, the application of these methods to study novel electronic devices such as nanotubes, graphene, Si-nanowires and low-dimensional thermoelectric devices and photodetectors are discussed.

In the presence of electric field or optical excitations, which are present in electronic devices, carriers can be driven far from equilibrium. For dynamic response, it is also desirable to use methods based on non-QSA. Looking for beautiful books? Overall mobility solidmobility in K-valleys dashedand mobility in Q-valleys dotted.

In these structures tunneling between source and drain is controlled by the gate-source pourfqth. The device response was studied for a wide range of photon energies. Product details Format Paperback pages Dimensions x x A small tensile strain has a higher impact on the mobility of materials with a smaller energy distance between the valleys, such as MoSe 2 and WSe 2.

The absence of an energy gap, however, seriously jeopardizes the usage of this material for some important electronic applications, including digital circuits. Simulation results indicate the importance of the gate-source and gate-drain spacer lengths.

In this book the required concepts from quantum and statistical mechanics and numerical methods for calculating Green functions are presented.

Based on this observed property, we have proposed monolayers of MoSe 2 and WSe 2 as excellent base materials for highly sensitive strain gauges. Visit our Beautiful Books pourfatj and find lovely books for kids, photography lovers and more.

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An atomistic simulation based on the non-equilibrium Green’s function formalism is employed. By using our website you agree to our use of cookies. The quasi-static approximation QSA was used to investigate the dynamic response of these devices.

Publications Authored by Mahdi Pourfath | PubFacts

The results indicate that a tensile strain increases mobility, whereas a compressive strain reduces mobility. The lowest- and the second-lowest band minima in the conduction band of these materials are denoted as K- and Q-valleys. He joined the Institute pourfatn Microelectronics in Octoberwhere he received his doctoral degree in technical sciences in July and is currently employed as a post-doctoral researcher. Furthermore, it can be inferred from the results that mhadi to the smaller density of states and the resulting smaller quantum capacitance of GNRs as compared to graphene, better switching and frequency response can be achieved for VTGNRFETs.

Solid and dashed curves, respectively, denote the results for biaxial and uniaxial strain along the armchair direction. Other books in this series. Dispatched from the UK in 4 business days When will my order arrive? Their electronic properties exhibit a dependence on the ribbon direction and width. Description For modeling the transport of carriers in nanoscale devices, a Green-function formalism is the most accurate approach.

Mahdi Pourfath

To achieve more realistic results it is necessary to extend the codes to include 3D geometries. He joined the Insitute for Pojrfath in Octoberwhere he is currently working on his doctoral degree. Table of contents Review of quantum mechanics.

His research interests include nanoelectronics, quantum transport, and two-dimensionals. Unstrained mobility and mobility enhancement with a strain strongly depend on the energy distance between the K- and Q-valleys.

The Non-Equilibrium Green’s Function Method for Nanoscale Device Simulation

All the elements of the kinetic equations, which are the device Hamiltonian, contact self-energies, and scattering self-energies, are examined and efficient methods for their evaluation are explained.

As shown in Fig. Unlike conventional strain gauges where geometric and piezoelectric terms contribute to the gauge factor, in these materials the intervalley phonon-limited mobility is strongly affected by strain, which results in large gauge factors. He joined the Institute for Microelectronics in Octoberwhere he received his doctoral degree in technical sciences in July and the venia docendi in microelectronics in March Erasmus Langer Siegfried Selberherr.

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The energy conversion efficiency as a function of the incident photon energy and ribbon’s width is evaluated and compared to their nanotube counterparts. Due to the complexity of the formalism, one should have a deep understanding of the underlying principles and use smart approximations and numerical methods for solving the kinetic equations at a reasonable computational time.

Iue Annual Review

Check out the top books of the year on our page Best Books of Mahdi Pourfath MSc Dr. Hierarchical Device Simulation Christoph Jungemann. His scientific interests include the numerical study of novel nano-electronic devices. We have performed a comprehensive analysis on the effect of strain on the mobility of several Pourfqth MoS 2MoSe 2WS 2and WSe 2employing ab initio simulations pourfatb the band structure and the linearized Boltzmann transport equation for mobility evaluation, including the effects of intrinsic phonons, remote phonons, and screened charge impurities.

Graphene, a one-atomic carbon sheet with a honeycomb structure, has attracted significant attention due to its unique physical properties. Monolayer and bilayer graphene has been utilized as the channel material for Field-Effect Transistors FETswhere the monolayer structure of graphene results in excellent gate control over the channel.

GNRs have recently attracted much interest as they are recognized as promising building blocks for nano-electronic devices. He studied electrical engineering at the Sharif University of Technology, where he received the MSc degree in