BUDF. DESCRIPTION. ·Collector-Emitter Sustaining Voltage VCEO(SUS) = V (Min). ·High Switching Speed. ·Built-in Damper Diode. APPLICATIONS. BUDF. DESCRIPTION. ·With TO-3PFa package. ·High voltage,high speed. · Built-in damper diode. APPLICATIONS. ·For use in horizontal deflection circuits. BUDF datasheet, BUDF circuit, BUDF data sheet: PHILIPS – Silicon Diffused Power Transistor,alldatasheet, datasheet, Datasheet search site for.
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July 2 Rev 1.
Datqsheet transistor equivalent substitute crossreference search. This data sheet contains target or goal specifications for product development. July 6 Rev 1. Application information Where application information is given, it is advisory and does not form part of the specification.
BU2508DF Silicon Diffused Power Transistor
Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Npn triple diffused buaf planar silicon transistor color tv horizontal output applicationsno damper diode to3pml.
This data sheet contains final product specifications. Typical collector daasheet and fall time. II Extension for repetitive pulse operation. Philips silicon diffused power transistor,alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors.
Budf philips semiconductors, budf datasheet. No liability will be accepted by the publisher for any consequence of its use. High collectorbase voltagevcbov high speed switching. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. Forward bias safe operating area.
Refer to mounting instructions for F-pack envelopes.
BUDF datasheet(1/7 Pages) PHILIPS | Silicon Diffused Power Transistor
Buaf datasheet, equivalent, cross reference search. Philips customers using eatasheet selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
July 5 Rev 1. Buaf transistor equivalent substitute crossreference search. Typical base-emitter saturation voltage. Philips semiconductors product specification silicon diffused power transistor budf general description enhanced performance, new generation, highvoltage, highspeed switching npn transistor with an integrated damper diode in a plastic fullpack envelope.
C 1 Turn-off current. Typical DC current gain. Silicon diffused power transistor buaf general description enhanced performance, new generation, highvoltage, highspeed switching npn transistor in a plastic fullpack. C I Region of permissible DC operation. Buaf datasheet, buaf pdf, buaf data sheet, buaf manual, buaf pdf, buaf, datenblatt, electronics buaf, alldatasheet, free, datasheet.
July 7 Rev 1.
SOT; The seating plane is electrically isolated from all terminals. Typical collector-emitter saturation voltage.
BU 2508DF PHI
Stress above one or more of the limiting values may cause permanent damage to the device. July 1 Rev 1. Silicon diffused power transistor buaf datasheet catalog.
These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.
The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. Exposure to limiting values for extended periods may affect device reliability.
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